Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1527927 | Materials Chemistry and Physics | 2006 | 5 Pages |
Abstract
Monodispersed and high-density nanocrystalline GaN particles were in situ synthesized in silica xerogel by a sol-gel method. Microstructure and morphology analyses reveal that as-prepared GaN crystallites were hexagonal phase. It is well dispersed in silica matrix with uniformed size, and its average size varied from 3 to 8Â nm with prolonging the nitridation period and enhancing the reaction temperature. The FTIR spectrum shows a GaN bond stretch present at 600Â cmâ1, which indicated that the element Ga atom dominantly existed with GaN bond in the samples. Room temperature photoluminescence (PL) exhibited a non-size-dependence near band-edge emission of GaN at 390Â nm and another PL emission peak about 565, 570, 580Â nm with different intensity in three samples, respectively. The possible reason for the PL results was proposed.
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Authors
Hailin Qiu, Chuanbao Cao, Dazhi Wang, Hesun Zhu,