Article ID Journal Published Year Pages File Type
1528156 Materials Chemistry and Physics 2006 4 Pages PDF
Abstract

High-density aligned ZnO nanorods films were grown on zinc-covered Si wafer by using hydrothermal method in the alkali solution containing hydrogen peroxide (H2O2). The growth process involves the oxidation of zinc into oxidized zinc species cluster in the alkali solution containing hydrogen peroxide (H2O2) and the ZnO nanorods growth process in which oxidized zinc species provide seeds for nucleation site of nanorods ZnO crystal growth during hydrothermal process. The hydrogen peroxide plays a key role in formation of oxidized zinc species cluster. Room temperature PL spectrum and Raman spectrum of the sample are also studied and indicate that there is a very low concentration of oxygen vacancies in the highly oriented ordered ZnO nanorods.

Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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