| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1528483 | Materials Science and Engineering: B | 2016 | 14 Pages |
Abstract
- Nb and N co-doping provides excellent optoelectronic properties for SnO2 NTs.
- The optoelectronic properties of doped SnO2 are studied by first principles study.
- (Sn0.95Nb0.05)O2:N-600 NTs exhibits superior ABPE (4.1%) to date.
- Excellent photoelectrochemical stability of (Sn0.95Nb0.05)O2:N-600 NTs.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Prasad Prakash Patel, Prashanth Jampani Hanumantha, Oleg I. Velikokhatnyi, Moni Kanchan Datta, Bharat Gattu, James A. Poston, Ayyakkannu Manivannan, Prashant N. Kumta,