Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1528626 | Materials Science and Engineering: B | 2015 | 6 Pages |
Abstract
A thin Ni layer of 5 nm thickness was deposited in between indium-tin-oxide (ITO) and aluminum-doped-zinc oxide (AZO) layers of 50 nm thickness each. The Ni inserting tri-layer structure (ITO/Ni/AZO) showed lower resistivity of 5.51 Ã 10â4 Ωcm which is nearly 20 times lesser than 97.9 Ã 10â4 Ωcm of bilayer structure (ITO/AZO). A thin Ni layer in between ITO and AZO enhanced the carrier concentration, mobility and photoresponse behaviors so that figure of merit (FOM) value of ITO/Ni/AZO device was greater than that of ITO/AZO device. ITO/Ni/AZO structure showed improved quantum efficiencies over a broad range of wavelengths (â¼350-950 nm) compared to that of ITO/AZO bilayer structure, resulting in enhanced photoresponses. These results show that the optical, electrical and photoresponse properties of ITO/AZO structure could be enhanced by inserting Ni layer of 5 nm thickness in between ITO and AZO layers.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
M. Melvin David Kumar, Hyunki Kim, Yun Chang Park, Joondong Kim,