| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1528698 | Materials Science and Engineering: B | 2014 | 7 Pages |
Abstract
- Cu2ZnSnSe4 films were prepared by metallic-target sputtering and post-selenization.
- Target composition determines film characteristics and device performance.
- CZTSe of the 2.6% efficient cell had np of 7.06 Ã 1017 cmâ3 and μ of 80 cm2 Vâ1 sâ1.
- Dense CZTSe films with large CZTSe grains of 2.5-5.0 μm were obtained.
- Our devices had the microstructure similar to those of top devices in efficiency.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Dong-Hau Kuo, Jin-Tung Hsu, Albert Daniel Saragih,