| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1528917 | Materials Science and Engineering: B | 2013 | 9 Pages |
Abstract
Highlights
- Ion implantation and annealing were used to synthesize InAs and GaSb nanocrystals (NCs) in Si.
- Nanocrystal size is varied from 2 to 100Â nm depending on implantation and annealing regimes and on getter layer presence.
- Strain relaxation in A3B5/Si systems results in a misfit dislocation networks creation at A3B5 nanoclusters/Si interfaces.
- An anomalous bright “glowing” of nanocrystal/Si interfaces in dark-field TEM images is observed and discussed, too.
- Ion implantation and annealing were used to synthesize InAs and GaSb nanocrystals (NCs) in Si.
- Nanocrystal size is varied from 2 to 100Â nm depending on implantation and annealing regimes and on getter layer presence.
- Strain relaxation in A3B5/Si systems results in a misfit dislocation networks creation at A3B5 nanoclusters/Si interfaces.
- An anomalous bright “glowing” of nanocrystal/Si interfaces in dark-field TEM images is observed and discussed, too.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
F. Komarov, L. Vlasukova, O. Milchanin, W. Wesch, E. Wendler, J. Zuk, I. Parkhomenko,