| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1528953 | Materials Science and Engineering: B | 2013 | 5 Pages |
•Electrical characteristics of the IGZO TFTs evaluated with annealing method and temperature.•The RTA process exhibited high off-current and subthershold slope due to fast annealing process time.•The CTA process exhibited low subthreshold slope and low drive current.•The post RTA process effectively improves the interface trap state generated by the RTA process.
The influences of the annealing process on solution-derived InGaZnO thin-film transistors (TFTs) were investigated. Operation characteristics of IGZO TFTs were obtained from high temperature processes: rapid thermal annealing (RTA) at 600 °C and conventional thermal annealing (CTA) at 500 °C. It is found that the RTA increases the on-current and off-current of TFTs. The CTA decreases off-current and improves the interfacial property. Meanwhile, a two-step annealing process, comprising RTA and CTA, increases on-current and decreases off-current and is considered as the optimal annealing procedure. Another two-step annealing process, comprising CTA and RTA, increases on-current but increases off-current, simultaneously.
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