Article ID Journal Published Year Pages File Type
1528999 Materials Science and Engineering: B 2013 6 Pages PDF
Abstract

In this study, we investigate the behavior of the current–voltage (I–V) characteristics of AlGaN/GaN HEMT in the temperature range of 223–398 K. Temperature dependent device characteristics and the current transport mechanism are reported. It is observed that the Schottky barrier height Φ increases and the ideality factor n decreases with temperature. There is a linear relationship between the barrier height and the ideality factor, which is attributed to barrier height inhomogeneities of AlGaN/GaN HEMT. The estimated values of the series resistances (Rs) are in the range of 144.2 Ω at 223 K to 74.3 Ω at 398 K. The Φ, n, Rs, Gm and Schottky leakage current values are seen to be strongly temperature dependent.

► We report the behavior of the current–voltage characteristics of AlGaN/GaN HEMT in the temperature range of 223–398 K. ► The origin of the leakage current and the current transport behaviors are reported. ► There is a linear relationship between the barrier height and the ideality factor, which is attributed to barrier height in homogeneities.

Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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