Article ID Journal Published Year Pages File Type
1529020 Materials Science and Engineering: B 2013 5 Pages PDF
Abstract
► Effective copper diffusivity in boron-doped silicon wafer was measured. ► Dynamic secondary ion mass spectrometry was used. ► Interstitial copper ions were first drifted to surface region and allowed to back-diffuse. ► Boron concentration largely influenced the effect copper diffusivity.
Keywords
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
Copper diffusivity in boron-doped silicon wafer measured by dynamic secondary ion mass spectrometry
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