| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1529075 | Materials Science and Engineering: B | 2012 | 4 Pages |
Abstract
⺠Inert salt-assisted route has been extended to synthesize β-Ga2O3 nanostructures. ⺠β-Ga2O3 nanowires and nanobelts covered bare Si substrate. ⺠The depositing temperature was lower down to 650 °C. ⺠Low temperature growth was attributed to the well dispersion of Ga over inert salt. ⺠The synthesized products have a stable and broad green emission band.
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Authors
Yingying Lv, Leshu Yu, Dagui Zheng, Aili Xie, Xueli Chen,