| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1529136 | Materials Science and Engineering: B | 2011 | 5 Pages |
Abstract
⺠An enhanced minority carrier lifetime at extended defects in multicrystalline silicon is observed with the use of HF/HNO3 stain etching to texture the surface. ⺠FTIR analysis shows no influence of oxide passivation in this effect. ⺠SEM images show a preferential etching at extended defects suggesting smoothing at defects as one of the causes for the reduced recombination activity. ⺠LBIC images show a reduction in IQE at extended defects in HF/HNO3 textured multicrystalline solar cells.
Keywords
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
A. Montesdeoca-Santana, B. González-DÃaz, E. Jiménez-RodrÃguez, J. Ziegler, J.J. Velázquez, S. Hohage, D. Borchert, R. Guerrero-Lemus,