| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1529151 | Materials Science and Engineering: B | 2012 | 4 Pages |
Abstract
The paper presents the exemplary electro-thermal models of merged PiN Schottky diode - a diode with the parallel PiN junction, protecting the device against the uncontrolled voltage rise, causing so-called thermal runaway. In the presented models, the conductivity modulation effect in the PiN junction is taken into account. The influence of the PiN junction on the non-isothermal I-V characteristics of MPS diodes, for various cooling conditions, is discussed. It is shown, that the thermal runaway is possible, in spite of presence of protecting PiN junction.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Aneta Hapka, Wlodzimierz Janke, Jaroslaw Krasniewski,