| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1529213 | Materials Science and Engineering: B | 2012 | 7 Pages |
Abstract
⺠Monolithic evanescently coupled silicon laser (MECSL) structure treated. ⺠Optical mode profiles and thermal resistivity of MECSL optimized by simulation. ⺠MECSL through epitaxial lateral overgrowth (ELOG) of InP on Si exemplified. ⺠Passive waveguide in MECSL also acts as the defect filtering mask in ELOG. ⺠Growth of dislocation free thin InP layer on Si by ELOG for MECSL demonstrated.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Zhechao Wang, Carl Junesand, Wondwosen Metaferia, Chen Hu, Lech Wosinski, Sebastian Lourdudoss,