| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1529295 | Materials Science and Engineering: B | 2012 | 5 Pages |
Abstract
⺠We studied p-i-n GaInNAs MQW devices as function of temperature and magnetic field. ⺠Observed oscillations in the sample current-voltage curves at low temperature. ⺠Shift in oscillation position with magnetic field described by Landau level split. ⺠Resonant tunnelling and thermionic emission used to describe oscillations.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
H.M. Khalil, S. Mazzucato, S. Ardali, O. Celik, S. Mutlu, B. Royall, E. Tiras, N. Balkan, J. Puustinen, V.-M. Korpijärvi, M. Guina,