| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1529369 | Materials Science and Engineering: B | 2012 | 8 Pages |
In this study, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] end capped with polyhedral oligomeric silsesquioxanes (MEH-PPV-POSS): cadmium sulfide selenide quantum dots (CdS0.75Se0.25 QDs) nanocomposites based OLEDs were fabricated. By the addition of CdS0.75Se0.25 QDs into the polymer active layer, a considerable enhancement was observed in terms of hole and electron injection in devices. Additionally, the presence of QDs reduced the interchain interaction of polymer that resulted in narrower electroluminescence (EL) spectrum. The device structure of ITO/PEDOT: PSS/MEH-PPV-POSS: 25 wt% CdS0.75Se0.25/Ca (40 nm)/Al demonstrated the best performance with a brightness of 8672 cd/m2 at 10 V, current efficiency of 2.5 cd/A at 8 V, and an EQE of 0.55% at 150 mA/cm2.
► Incorporation of CdS0.75Se0.25 improves the MEH-PPV-POSS based PLED performance. ► Well-dispersed CdS0.75Se0.25 reduces the interchain interaction of the polymer. ► CdS0.75Se0.25 enhanced the charge injection into the MEH-PPV-POSS based PLEDs. ► CdS0.75Se0.25 provides a better charge balance in devices based on MEH-PPV-POSS. ► The optimum concentration is 25 wt% of CdS0.75Se0.25 resulted in efficient PLEDs.
