| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1529378 | Materials Science and Engineering: B | 2012 | 5 Pages |
p-type TlGaSeS single crystal was used to fabricate a Schottky device. Silver and carbon metals were used as the Ohmic and Schottky contacts, respectively. The device which displayed wide RF band at 13.200 and narrow band at 62.517 kHz with Q value of 1.4 and of 6.3 × 104, respectively, is characterized by means of current (I)–voltage (V), capacitance (C)–voltage characteristics as well as capacitance–frequency (f) characteristics. The device series resistance, ideality factor and barrier height are determined from the I–V curve as 35.8 MΩ, 1.2 and 0.74 eV, respectively. The apparent acceptor density and the build in voltage of the device increased with increasing ac signal frequency. The high Q value, observed at 62.517 kHz, indicated a much lower rate of energy loss relative to the stored energy of the device. The energy loss (Q−1) is much less than 0.001% of the stored value. The device was tested and found to remain at the same mode of resonance for several hours. It never switched or ceased unless it was tuned off.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Ag/p-TlGaSeS/C Schottky devices are designed and characterized. ► The device ideality factor and barrier heights are 1.2 and 0.74 eV, respectively. ► It displayed wide and narrow RF bands at 13.200 and 62.517 kHz, respectively. ► The relative Q values are found to be 1.4 and of 6.3 × 104, respectively.
