| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1529468 | Materials Science and Engineering: B | 2012 | 5 Pages |
Abstract
Thin n-type ZnO films doped with different atomic concentrations of aluminium were grown by filtered vacuum arc deposition (FVAD) on glass substrates. The films were deposited using an oxygen working pressure of 2.0 mTorr with an arc current running at two 100 ms pulses s−1. Structural, optical and electrical properties were investigated to understand the effect of Al doping on ZnO films. The best values were found for an ideal aluminium percentage between 4 and 6 at.%.
► AZO films prepared by filtered vacuum arc deposition. ► Systematic variation of Al concentration. ► Structural, electrical and optical properties analyzed. ► Optimized system for Al concentration between 4% and 6%.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
L.C. Gontijo, R. Machado, V.P. Nascimento,