| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1529472 | Materials Science and Engineering: B | 2012 | 5 Pages |
Schottky diodes have been fabricated on doped Si/SiO2 substrates in air, by simply crossing individual electrospun tin oxide (SnO2) and poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) (PEDOT-PSSA) nanoribbons. The conductivity of PEDOT-PSSA was ∼6 S/cm with no observable field effect, while SnO2 exhibited n-doped field effect behavior with a charge mobility of ∼3.1 cm2/V-s. The diodes operate in air or in vacuum, under ambient illumination or in the dark, with low turn-on voltages and device parameters that are tunable via a back gate bias or a UV light source. Their unique design involves a highly localized active region that is completely exposed to the surrounding environment, making them potentially attractive for use as sensors. The standard thermionic emission model of a Schottky junction was applied to analyze the forward bias diode characteristics and was successfully tested as a half wave rectifier.
Graphical abstractCrossed SnO2/PEDOT-PSSA nanoribbon Schottky diodes.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlight► An inexpensive electrospinning technique is used to fabricate crossed nanoribbons of n-doped tin oxide and p-PEDOT. ► Each intersection is a localized Schottky diode that is completely exposed to the environment after electrodes deposition. ► This makes it useful as a gas and light sensor. ► In addition, the ability to tune the diode parameters via a back gate truly makes this device multifunctional. ► A half wave rectifier has been demonstrated with this device under UV illumination.
