Stacking faults in an epitaxially grown PbTiO3 thick film and their size distribution

The microstructure of an epitaxial PbTiO3 thick film, grown on a SrRuO3/SrTiO3 substrate at 600 °C by pulsed-MOCVD method, was investigated by using transmission electron microscopy. A number of extrinsic or intrinsic stacking faults were observed in the epitaxial PbTiO3 thick film and they were parallel to the (0 0 1) plane of the PbTiO3. We also investigated the size distribution of these stacking faults. The width of these stacking faults along the [1 0 0] axis of the PbTiO3 was very small, ranging from 2 to 13 nm. It was also revealed that the size distribution of stacking faults depends on the position in the film: near the surface, near the substrate, near threading dislocations, and near 90° domain boundaries.

► We investigate the microstructure of an epitaxially grown PbTiO3 thick film by using TEM. ► We observed a number of stacking faults parallel to the (0 0 1) plane of the PbTiO3 in the film. ► We determined the size distribution of stacking faults as a function of the position in the film.