| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1529519 | Materials Science and Engineering: B | 2012 | 5 Pages |
We report a study on the optical properties of 40 keV Xe+ implants with a dose of 5 × 1016 ions/cm2 into p-type conducting CuInSe2 single crystals using the phase resolved method of the photoacoustic spectroscopy (PAS) technique. Photoacoustic spectra have been measured in the photon energy range 0.7 < hν < 1.4 eV prior and after implantation at various phase angles using a high resolution fully computerized spectrometer. Once the spectra separation is carried out, an analysis on the impact of Xe+ on the defect structure of CuInSe2 is presented. The results obtained here are discussed in the light of current reported literature.
► Analysis of Xe+ implanted CuInSe2 by phase resolved photoacoustic spectroscopy. ► Xenon implants damage effects on the near surface of CuInSe2. ► Analysis of the induced defect states following Xe+ implantation into CuInSe2.
