| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1529665 | Materials Science and Engineering: B | 2012 | 7 Pages |
We have successfully fabricated polycrystalline diamond rectifying junction devices on n-type (1 0 0) silicon substrates by Hot Filament Chemical Vapor Deposition (HFCVD) using methane/hydrogen process gas and trimethyl borate and trimethyl phosphite dissolved in acetone as p- and n-type dopants, respectively. Impedance spectroscopy and current–voltage analysis indicates that the conduction is vertical down the grains and facets and not due to surface effects. Electrical characteristics were analyzed with In and Ti/Au top metal contacts with Al as the substrate contact. Current–voltage characteristics as a function of temperature showed barrier potentials of 1.1 eV and 0.77 eV for the In and Ti/Au contacts, respectively. Barrier heights of 4.8 eV (In) and 4.4 eV (Ti/Au) were obtained from capacitance–voltage measurements.
► The result that we obtained are compared with single crystalline diamond devices. ► The barrier height of 4.4 eV matches the ideal pn-junction barrier height of diamond thin film.
