Influence of substrate bias voltage on the microstructure and residual stress of CrN films deposited by medium frequency magnetron sputtering

In this study, CrN films were deposited on stainless steel and Si (1 1 1) substrates via medium frequency magnetron sputtering under a systematic variation of the substrate bias voltage. The influence of the substrate bias voltage on the structural and the mechanical properties of the films were investigated. It is observed that there are two clear regions: (1) below −300 V, and (2) above −300 V. For the former region, the (1 1 1) texture is dominated as the substrate bias voltage is increased to −200 V. The lattice parameter is smaller than that of CrN reported in the ICSD standard (4.140 Å) and the as-deposited films exhibit tensile stress. Meanwhile, the surface roughness decreases and the N concentration show a slow increase. For the latter region, the (2 0 0)-oriented structure is formed. However, the lattice parameter is larger as compared with the value reported in the ICSD standard, and the surface roughness increases and the N concentration decreases obviously. In this case, the compressive stress is obtained.

► The pure CrN films have been successfully prepared by medium frequency magnetron sputtering. ► At low substrate bias voltage (<−300 V), the tensile stresses are generated in the films. ► At high substrate bias voltage (>−300 V), the compressive stresses are observed in the films. ► The texture of the CrN films changes from (1 1 1) to (2 0 0) with increasing substrate bias voltage. ► The surface roughness firstly decreases and then increases with increasing bias voltage.