Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1529808 | Materials Science and Engineering: B | 2011 | 6 Pages |
Abstract
High temperature power electronics has become possible with the recent availability of silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate at temperatures above 500 °C, whereas silicon is limited to 150–200 °C. Applications such as transportation or a deep oil and gas wells drilling can benefit. A few converters operating above 200 °C have been demonstrated, but work is still ongoing to design and build a power system able to operate in harsh environment (high temperature and deep thermal cycling).
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua, Charles Joubert, Mihai Lazar, Christian Martin, Hervé Morel, Dominique Tournier, Christophe Raynaud,