Article ID Journal Published Year Pages File Type
1529809 Materials Science and Engineering: B 2011 4 Pages PDF
Abstract

In the paper, the dynamic nonlinear model of SiC devices is proposed, where the dependencies of the thermal parameters on the temperature are included. The proposed model is applicable and useful in the simulations of electro-thermal transients in the devices working with high power density and in the wide range of temperature.

Keywords
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
Nonlinear thermal characteristics of silicon carbide devices
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