Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1529810 | Materials Science and Engineering: B | 2011 | 4 Pages |
Abstract
Classically, in semiconductor simulation programs it is assumed that the semiconductor material is isotropic, i.e. dielectric constant, transport parameters such as carrier mobility have no direction dependence. In this work, we propose a numerical study for the Poisson's equation, addressing the anisotropic properties for the hexagonal silicon carbide (SiC) polytype. The implementation uses a vectorized code. Investigation has been conducted for the 4H- and 6H-SiC. Our results have been compared with TCAD-dessis which enables anisotropic simulation, results have shown good agreement.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Gesualdo Donnarumma, Janusz Woźny, Zbigniew Lisik,