Article ID Journal Published Year Pages File Type
1529838 Materials Science and Engineering: B 2010 4 Pages PDF
Abstract

In this paper, we investigated electrical properties and microstructures of ZrTiO4 (ZrO2–TiO2) thin films prepared by the sol–gel method on ITO substrates at different annealing temperatures. All films exhibited ZrTiO4 (1 1 1) and (1 0 1) orientations perpendicular to the substrate surface, and the grain size increased with increase in the annealing temperature. A low leakage current density of 2.06 × 10−6 A/cm2 was obtained for the prepared films. Considering the primary memory switching behavior of ZrTiO4, ReRAM based on ZrTiO4 shows promise for future nonvolatile memory applications.

Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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