| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1530005 | Materials Science and Engineering: B | 2009 | 4 Pages |
Abstract
We prepared ZnO-coated Ga2O3 nanowires and investigated changes in the morphological, structural, and photoluminescence (PL) characteristics resulting from application of a thermal annealing process. With the thermal annealing at 800 °C, defect-associated PL peaks (2.2 and 2.6 eV) have been intensified with respect to the UV peak, and a new 2.8 eV-peak has been generated. Possible emission mechanisms are also discussed.
Keywords
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Hyoun Woo Kim, Jong Woo Lee, Mesfin Abayneh Kebede, Hyo Sung Kim, Chongmu Lee,