Article ID Journal Published Year Pages File Type
1530043 Materials Science and Engineering: B 2010 4 Pages PDF
Abstract

Photoluminescence (PL) and electroluminescence (EL) of silicon rich oxide (SRO) films deposited by low pressure chemical vapour deposition (LPCVD) have been researched. SRO films emit an intense PL band between 550 and 850 nm. EL was studied using fluorine-doped tin oxide (FTO)/thin SRO/n-Si structures. Intense and stable electroluminescence was observed under reverse bias. EL is observed between 400 and 900 nm with two main peaks around 450 and 600 nm. EL was related to charge injection through conductive paths and radiative recombination between traps or defect levels.

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Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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