Article ID Journal Published Year Pages File Type
1530057 Materials Science and Engineering: B 2010 7 Pages PDF
Abstract

Cu(In1−xAlx)Se2 [CIAS] thin films were prepared for the first time by successive ionic layer adsorption and reaction [SILAR] method with two different dipping cycles. The thickness of the films was measured by gravimetric technique. The structural, morphological, compositional, optical transition and electrical investigation of SILAR CIAS thin films with respect to two different dipping cycles have been discussed in this paper.

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Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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An investigation on silar Cu(In1−xAlx)Se2 thin films
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