Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1530070 | Materials Science and Engineering: B | 2010 | 6 Pages |
Abstract
Structural and electrical characterization of palladium oxide (PdO) films grown by thermal oxidation of nanometric Pd films is reported. Pd films were deposited on n-type silicon (1 1 1) substrates by the electroless deposition technique (EDT) in a PdCl2–HF aqueous solution. The growth rate and the structural properties of PdO films were characterized using X-ray diffraction and Raman spectroscopy techniques. The electrical properties of the PdO films were measured by the van der Pauw method. The PdO films resulted p-type with a hole concentration of 1020 cm−3 and mobility in the range of 2–32 cm2/V s.
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Authors
O. García-Serrano, C. López-Rodríguez, J.A. Andraca-Adame, G. Romero-Paredes, R. Peña-Sierra,