Article ID Journal Published Year Pages File Type
1530070 Materials Science and Engineering: B 2010 6 Pages PDF
Abstract

Structural and electrical characterization of palladium oxide (PdO) films grown by thermal oxidation of nanometric Pd films is reported. Pd films were deposited on n-type silicon (1 1 1) substrates by the electroless deposition technique (EDT) in a PdCl2–HF aqueous solution. The growth rate and the structural properties of PdO films were characterized using X-ray diffraction and Raman spectroscopy techniques. The electrical properties of the PdO films were measured by the van der Pauw method. The PdO films resulted p-type with a hole concentration of 1020 cm−3 and mobility in the range of 2–32 cm2/V s.

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Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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