| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1530138 | Materials Science and Engineering: B | 2010 | 4 Pages |
Abstract
We have fabricated epitaxial Pr0.8Ca0.2MnO3 (PCMO) insulator layers sandwiched between Al top electrodes and epitaxial La0.6Sr0.4MnO3 bottom electrode layers on (LaAlO3)0.3-(Sr2AlTaO6)0.7 (1Â 0Â 0) substrates. Various sizes of metal/insulator/metal device structures were formed by photolithography and Ar ion milling. Device size dependence of Al/PCMO interface resistances was well fitted by series-parallel equivalent circuit, indicating several types of different resistance components exist at the Al/PCMO interfaces. These different resistance components suggest that defects might distribute inhomogeneously at the Al/PCMO interfaces which exhibit the resistance switching.
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Authors
G. Sugano, I. Ohkubo, T. Harada, T. Ohnishi, M. Lippmaa, Y. Matsumoto, H. Koinuma, M. Oshima,