Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1530141 | Materials Science and Engineering: B | 2010 | 4 Pages |
Abstract
xBi(Zn1/2Ti1/2)O3–(1 − x)BiFeO3 films with x = 0–0.68 were prepared on (1 0 0)SrTiO3 and (1 0 0)cSrRuO3||(1 0 0)SrTiO3 substrates by pulsed metalorganic chemical vapor deposition. Effects of the composition, x, on the constituent phases and their electrical properties were systematically investigated. {1 0 0}-oriented epitaxial films were ascertained to be grown and three series of peaks with x = 0–0.23 (Peak A), x = 0.15–0.44 (Peak B) and x = 0.23–0.68 (Peak C) were observed. Leakage current density monotonously decreased with increasing x. On the other hand, maximum relative dielectric constant of the films was observed at x = 0.20, almost corresponding to the compositional boundary of the x between Peaks A and C.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Keisuke Yazawa, Shintaro Yasui, Masaaki Matsushima, Hiroshi Uchida, Hiroshi Funakubo,