Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1530222 | Materials Science and Engineering: B | 2010 | 6 Pages |
Abstract
We developed a novel technique for obtaining a residual-strain-free GaN layer by the hydride vapor phase epitaxy (HVPE) method using one-dimensional nanostructures. The GaN layer was grown on a Si(1 1 1) substrate with a conventional AlN film and one-dimensional GaN nanostructures. The nanostructures were grown for 2 h with a HCl:NH3 gas flow ratio of 1:50. The growth rate of nanoneedles at 600 °C and nanorods at 650 °C were 2.553 and 2.193 μm/h, respectively. The overgrown GaN layer was grown at 1050 °C for 5 and 10 min. We obtained a GaN layer of 1.833 μm thickness and c = 5.1849 Ã
. The morphology, crystalline structure, and optical characteristics of the GaN layer were examined by field emission scanning electron microscopy, X-ray diffraction, and photoluminescence.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
H.Y. Kwon, J.Y. Moon, Y.J. Choi, M.J. Shin, H.S. Ahn, M. Yang, J.H. Chang, S.N. Yi, D.H. Ha,