| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1530286 | Materials Science and Engineering: B | 2010 | 7 Pages |
Abstract
The increase of a commercial solar cell performance implies an improvement in the different processes in the industrial production. In order to know the main limitations in the efficiency of Czocharalski-Si (Cz-Si) photovoltaic cells, the loss distribution was studied by means of external quantum efficiency, I–V measurements and PC-1D simulation in the current device. One of the most relevant losses is due to recombination in the emitter. The emitters with a low resistance (40 Ω/□) and a deep pn-junction, display a considerable loss ratio. Shallower emitters (80 Ω/□) with low doping density and a new paste for the front side result in a relative improvement in cell efficiency of 3.5%.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
C. Vázquez, J. Alonso, M.A. Vázquez, L.J. Caballero, R. Romero, J.R. Ramos-Barrado,