| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1530381 | Materials Science and Engineering: B | 2009 | 6 Pages |
Abstract
A quantitative methodology of In distribution in nominal InAs/GaAs individual quantum dot (QD) is presented. Numerical simulations, using multislice-based approach, allow predicting high angle annular dark field (HAADF or Z-contrast) micrograph contrasts working in scanning transmission electron microscopy (STEM) mode. Even the method is adapted for nanometric scale; it is shown that its high sensitivity can reveal In-segregation in QD. The here observed samples show In diffusion below the wetting layer giving an elliptical-like shape of the observed QD.
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Authors
D. Araújo, R. El Bouayadi, M. Gutiérrez, C.E. Pastore, M. Hopkinson,