Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1530385 | Materials Science and Engineering: B | 2009 | 4 Pages |
Abstract
The dynamical behavior of methylchloride (CH3Cl), which has a possibility of an important precursor in the atomic-order etching of III-V compounds, was studied on a GaAs(0 0 1) â 2 Ã 4 surface using a supersonic molecular beam. When the surface temperature was below 570 K, the incident CH3Cl molecule had two kinds of reaction channels. The one was a trapping/desorption channel, where CH3Cl loosely trapped in the surface potential well. The other was a direct inelastic scattering channel, where CH3Cl was unable to lose sufficient translational energy on the surface and directly scattered into the vacuum. In the low incident energy, the reaction through the former channel was dominant, but the reaction through the latter one drastically increased with the incident energy.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
M. Ozeki, M. Tomikawa, N. Onitsuka,