| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1530386 | Materials Science and Engineering: B | 2009 | 4 Pages |
Abstract
In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In0.15Ga0.85As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0Â ML that are, respectively, below and above the expected critical value for QD ripening in the InAs/GaAs system. The samples have been investigated by atomic force microscopy (AFM), transmission electron microscope (TEM), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) techniques. The results obtained by the above techniques are compared and discussed.
Keywords
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
J.C. Rimada, M. Prezioso, L. Nasi, E. Gombia, R. Mosca, G. Trevisi, L. Seravalli, P. Frigeri, C. Bocchi, S. Franchi,