| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1530459 | Materials Science and Engineering: B | 2009 | 8 Pages |
Abstract
Nanocavities created in silicon using high energy He+ implantation are studied using the combination of transmission electron microscopy experiments and small-angle X-ray scattering measurements. The complementarity of the two techniques is presented and using the results from both techniques, a complete characterisation of nanocavities can be drawn in terms of location of the implanted region, morphology, mean size and volume fraction as well as the cavity size distribution.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
M. Dumont, M.-V. Coulet, F. Bley, G. Regula,