Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1530621 | Materials Science and Engineering: B | 2009 | 4 Pages |
Abstract
In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances (ρc ∼ 10 mΩ cm2) have been obtained on 2.8 Ω cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
D. Muñoz, C. Voz, S. Blanque, D. Ibarz, J. Bertomeu, R. Alcubilla,