| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1530643 | Materials Science and Engineering: B | 2009 | 5 Pages |
Abstract
Low temperature irradiation experiments show a remarkable contrast between Si and Ge, suggesting that the behavior of self-interstitials and vacancies is very different in the two materials. The present paper reviews theoretical and experimental investigations of the defects in an attempt to understand these differences.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
R. Jones, A. Carvalho, J.P. Goss, P.R. Briddon,