Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1530645 | Materials Science and Engineering: B | 2009 | 6 Pages |
Abstract
Cz-Si samples, initially subjected to thermal treatments under high hydrostatic pressure, were subsequently irradiated by fast neutrons. This paper describes a series of infrared spectroscopy measurements that enabled us to determine the effect of the pre-treatments on the annealing characteristics of the VO defect in Si. We found that the activation energies of the two main annealing reactions: VO + Oi â VO2 and VO + SiI â Oi that the defect participates, are comparatively smaller than those of initially untreated samples, correspondingly. We argue that the pre-treatments reduce the potential barrier for the migration of the VO defect (VO + Oi â VO2) and also reduces the binding energy of the SiI's, bound at large defect clusters (VO + SiI â Oi).
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
C.A. Londos, G.D. Antonaras, M.S. Potsidi, A. Misiuk,