Article ID Journal Published Year Pages File Type
1530648 Materials Science and Engineering: B 2009 4 Pages PDF
Abstract
Point defect transport in a growing crystal includes a drift along the temperature gradient, G, at a velocity αG. It was not clear if the drift is negligible or strong in silicon crystal growth. It is now found that reported microdefect patterns in crystals grown with a temporarily halt provide a clear evidence in favour of a strong (even gigantic) drift of both kinds of intrinsic point defects. The drift coefficients αV (for vacancies) and αI (for self-interstitials) are deduced by fitting the simulating defect profiles to the observed location of halt-induced interstitial region immersed into a vacancy-type crystal.
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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