Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1530722 | Materials Science and Engineering: B | 2008 | 5 Pages |
Abstract
In this paper, we present the influence of thermal annealing on the I–V characteristics of Cu–Se resonant tunneling diodes of 100 nm diameter fabricated through template-based synthesis technique. Our experimental results indicate that high-temperature annealing can result in improvement of the electrical characteristics of Cu–Se resonant tunneling diodes. It is evidenced from an increase in peak to valley current ratio, which is 1.13 at room temperature of 300 K and is 5.05 at annealing temperature of 363 K. We present these results from I–V studies of these devices recorded at different annealing temperatures (323–363 K).
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Meeru Chaudhri, A. Vohra, S.K. Chakarvarti,