| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1530821 | Materials Science and Engineering: B | 2009 | 4 Pages |
Abstract
FeCoB layer prepared on Ru underlayer exhibited a high magnetic anisotropy field Hk around 500Â Oe. Sputtering conditions to fabricate Ru/FeCoB bilayered film with high Hk were examined. Low Ar gas pressure condition around 1Â mTorr for the deposition of FeCoB layer was required to induce compressive stress in the film which may cause an expansion of the lattice. The sputtering gas of Ar was preferable than Kr to cause the lattice expansion which resulted in higher Hk. Thinner Ru underlayer caused high Hk of the Ru/FeCoB bilayered film. The sputtering gas pressure for Ru underlayer of 6Â mTorr was better than that of 16Â mTorr to attain high Hk of FeCoB upperlayer.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Ken-ichiro Hirata, Atsuto Hashimoto, Toshimitsu Matsuu, Shigeki Nakagawa,