| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1531008 | Materials Science and Engineering: B | 2007 | 6 Pages |
Abstract
A vertical liquid-delivery metal-organic chemical vapour deposition (MO-CVD) reactor was used to deposit Bi4Ti3O12 films on SrTiO3(1 0 0) substrates. Depending on the growth conditions the films show a pure Bi4Ti3O12 phase or additionally a Bi poor phase. Well-ordered, (0 0 1)-oriented, epitaxially grown Bi4Ti3O12 films were obtained at a growth temperature of 700 °C, a Bi excess of 25%, and a substrate rotation between 500 and 750 rpm. The Bi deficiency can be influenced by the concentration of MO precursor in the liquid solution. Depositions on NdGaO3(1 1 0) also result in epitaxial (0 0 1)-oriented Bi4Ti3O12 films, but the structural quality was slightly poorer.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
J. Schwarzkopf, R. Dirsyte, M. Rossberg, G. Wagner, R. Fornari,