| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1531031 | Materials Science and Engineering: B | 2007 | 5 Pages |
Abstract
High quality AlN nanowires with hexagonal crystal structure were synthesized by the direct nitridation method at high temperature. The structural property of the AlN nanowires was investigated in detail. It is found that these straight AlN nanowires have smooth surface with length around 20–60 μm. TEM observation confirms the nanowires are single-crystalline and grow along [11–20] direction. In addition, Raman scattering and photoluminescence spectra from AlN nanowires were studied.
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Authors
M. Lei, H. Yang, Y.F. Guo, B. Song, P.G. Li, W.H. Tang,