| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1531054 | Materials Science and Engineering: B | 2008 | 5 Pages |
Abstract
A review is presented on irradiation-induced vacancy-type defects in relaxed Si1−xGex. The emphasis is put on results extracted from deep-level transient spectroscopy (DLTS) investigations of the vacancy, the di-vacancy, the oxygen-vacancy pair (the A-center) and the group-V—vacancy pair (the E-center). The positions of the associated levels in the band gap will in particular be followed as a function of the Ge content and, consequently, of the monotonic decrease of the band gap.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
A. Nylandsted Larsen, A. Bro Hansen, A. Mesli,