Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1531058 | Materials Science and Engineering: B | 2008 | 4 Pages |
Abstract
We demonstrated the effect of post-metallization annealing and Si interlayer thickness on Ge MOS capacitor on Ge-on-Si substrate with HfO2/TaN. Ge outdiffusion and oxygen interdiffusion were completely suppressed by thick Si interfacial layer. As a result, formation of insufficient low-k Ge oxides was effectively inhibited. It is confirmed that gate current of Si passivated Ge MOS was decreased by Si IL and decrease of gate current, Jg is saturated after Si IL of 2 nm. It was also observed that when Si IL is thick enough to restrict Ge outdiffusion, increase of Jg is not due to the temperature-induced Ge outdiffusion but due to the partial crystallization of HfO2 at higher annealing temperature.
Related Topics
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Materials Science
Electronic, Optical and Magnetic Materials
Authors
Ook Sang Yoo, Jungwoo Oh, Chang Yong Kang, Byoung Hun Lee, In Shik Han, Won-Ho Choi, Hyuk-Min Kwon, Min-Ki Na, Prashant Majhi, Hsing-Huang Tseng, Raj Jammy, Jin Suk Wang, Hi-Deok Lee,