Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1531059 | Materials Science and Engineering: B | 2008 | 4 Pages |
Abstract
This work presents the selective epitaxial growth (SEG) of Si1−xGex (x = 0.15–0.315) layers with high amount of boron (1 × 1020–1 × 1021 cm−3) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
H.H. Radamson, M. Kolahdouz, R. Ghandi, M. Ostling,