Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1531093 | Materials Science and Engineering: B | 2008 | 4 Pages |
Abstract
In this paper, the influence of biaxial strain-induced diffusion anisotropy on the evolution of extended defects in silicon has been analyzed. Point-defect diffusion anisotropy has been modeled and implemented within an atomistic kinetic Monte Carlo framework. The anneal of {3 1 1}-defects has been simulated for self-interstitial diffusion anisotropies varying within the plausible ranges. From these simulations, it is observed that diffusion anisotropy has a significant effect on the competition between defect ripening and dissolution. In particular, it is shown that the plot of {3 1 1} density versus {3 1 1} mean size could be used to check for the existence of self-interstitial diffusion anisotropy.
Related Topics
Physical Sciences and Engineering
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Authors
P. Castrillo, R. Pinacho, M. Jaraiz, J.E. Rubio, J. Singer,